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160-GHz power amplifier design in advanced siGe HBT technologies with P sat in excess of 10 dBm



  ID Publisher : 0000008984
  Nama Jurnal : IEEE Transactions on Microwave Theory and Techniques
  Pengarang : neelanjan sarmah pascal chevalier and ullrich R pfelffer
  Subjek : imaging milimeter-wave integrated circuits monolithic microwave integrated circuits (MMICs) 110-170 GHz amplifiers power amplifiers(PAs) siGe heterjunction bipolar transistor (HBT) transmitter compone
  Edisi : 61 / 2 / Februari 2013


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