Selamat Datang
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E-JOURNAL
High-efficiency and high-power microwave amplifier using GaN-on-Si FET With improved high-temperature operating characteristics
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| ID Publisher | : 0000008291 | |
| Nama Jurnal | : IEEE Transactions on Microwave Theory and Techniques | |
| Pengarang | : Isao takenaka , kohji ishikura , kazunori asano , shinnosuke takahashi , Yasuhiro murase, yuji ando , jidemasa takashi and chiaki sasaoka | |
| Subjek | : FET , High efficiency, high power , high temperature , resitivity , second harmonic , Si subsrate | |
| Edisi | : 62 / 3 / maret 2014 |
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