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A Broadband and Scalable Lossy Substrate Model for RF Noise Simulation and Analysis in Nanoscale MOSFETs With Various Pad Structures



  ID Publisher : 0000004684
  Nama Jurnal : IEEE Transactions on Microwave Theory and Techniques
  Pengarang : Jyh-Chyurn Guo and Yi-Hsiu Tsai
  Subjek : Broadband, lossy substrate, nanoscale MOSFET, pad, RF noise, scalable
  Edisi : 57 / 2 / February 2009


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