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Modeling and Simulation of Biaxial Strained P-MOSFETs: Application to a Single and Dual Channel Heterostructure



  ID Publisher : 0000042574
  Nama Jurnal : International Journal of Electrical and Computer Engineering (IJECE)
  Pengarang : Amine Mohammed Taberkit, Ahlam Guen-Bouazza, Benyounes Bouazza
  Subjek : Biaxial strain, CMOS technology, SILVACO-TCAD, Strained silicon layers
  Edisi : 8 / 1 / Februari 2018


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