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Influence of Gate Material and Process on Junctionless FET Subthreshold Performance



  ID Publisher : 0000020685
  Nama Jurnal : International Journal of Electrical and Computer Engineering (IJECE)
  Pengarang : Munawar A Riyadi, Irawan D Sukawati, Teguh Prakoso, Darjat
  Subjek : Gate material In-situ doping Junctionless FET SOI Subthreshold performance
  Edisi : 6 / 2 / April 2016


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