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Projected Range Dependent Tunneling Current of Asymmetric Double Gate MOSFET



  ID Publisher : 0000020597
  Nama Jurnal : International Journal of Electrical and Computer Engineering (IJECE)
  Pengarang : Hak Kee Jung
  Subjek : asymmetric double gate, gaussian functon, projected range, thermionic current, tunneling current.
  Edisi : 6 / 1 / Februari 2016


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