Untitled HOME GANTI PASSWORD LOGOUT




Selamat Datang
SELAMAT DATANG DI PERPUSTAKAAN ONLINE

E-JOURNAL

Substrate Current Evaluation for Lightly and Heavily Doped MOSFETs at 45 nm process Using Physical Models



  ID Publisher : 0000017991
  Nama Jurnal : Bulletin of Electrical Engineering and Informatics (BEEI)
  Pengarang : Sanjay Sharma, R. P. Yadav, Vijay Janyani
  Subjek : Substrate current, ATLAS, lightly and heavily doped substrate, impact ionization
  Edisi : 5 / 1 / Maret 2016


Download File...

  Isi_Abstraksi_957412085543.pdf
  [   bytes ]


Kembali


Untitled
          
LINK FAKULTAS
MENU MAHASISWA