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Linear I-V Characteristics of Highly-doped SOI p-i-n Diode for Low Temperature Measurement



  ID Publisher : 0000012387
  Nama Jurnal : International Journal of Technology
  Pengarang : A. A. N. Gde Sapteka, Djoko Hartanto, Harry Sudibyo, Michiharu Tabe, Daniel Moraru, Hoang Nhat Tan, Ryousuke Unno, Arief Udhiarto, Sri Purwiyanti
  Subjek : I-V characteristics; P-I-N diode; SOI; Sensor; Temperature
  Edisi : 6 / 3 / Juli 2015


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